maximum ratings: (t c =25c) symbol units collector-base voltage v cbo 140 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 7.0 v continuous collector current i c 16 a peak collector current i cm 20 a continuous base current i b 5.0 a power dissipation p d 200 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 0.875 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =140v 2.0 ma i cex v ce =140v, v eb(off) =1.5v 2.0 ma i cex v ce =140v, v eb(off) =1.5v , t c =150 c 7.0 ma i ceo v ce =70v 2.0 ma i ebo v eb =7.0v 5.0 ma bv ceo i c =200ma 140 v v ce(sat) i c =10a, i b =1.0a 1.0 v v ce(sat) i c =16a, i b =4.0a 2.0 v v be(sat) i c =10a, i b =1.0a 1.8 v v be(on) v ce =2.0v, i c =8.0a 1.5 v h fe v ce =2.0v, i c =8.0a 15 60 h fe v ce =2.0v, i c =16a 4.0 f t v ce =20v, i c =1.0a, f=500khz 1.0 mhz c ob v cb =10v, i e =0, f=100khz 1000 pf h fe v ce =10v, i c =4.0a, f=1.0khz 15 2N6031 pnp silicon power transistor 140 volts, 200 watts to-3 case central semiconductor corp. tm r0 (27-august 2009) description: the central semiconductor 2N6031 is a 16 ampere pnp silicon power transistor designed for use in high power amplifiers and high voltage switching regulator circuits. marking: full part number
central semiconductor corp. tm to-3 case - mechanical outline 2N6031 pnp silicon power transistor 140 volts, 200 watts r0 (27-august 2009) lead code: 1) base 2) emitter case) collector marking: full part number r2
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